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TPS28225DR  电桥驱动器8Pin High Frequency 4Amp Sink Synchronous MOSFET Driver 8SON 40 to 125
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电机驱动器
产品详情
型号TPS28225DR
封装8-SOIC
品牌Texas Instruments
描述电桥驱动器8-Pin High Frequency 4-Amp Sink Synchronous MOSFET Driver 8-SON -40 to 125
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TPS28225DR Datasheet, PDF

Electronic Manufacturer Part no Datasheet Electronics Description
Texas Instruments
Texas Instruments
TPS28225DR [Old version datasheet] High-Frequency 4-A Sink Synchronous MOSFET Driver
Texas Instruments
Texas Instruments
TPS28225-Q1 [Old version datasheet] High-Frequency 4-A Sink Synchronous MOSFET Drivers
TPS28225-Q1 [Old version datasheet] TPS28225-Q1 High-Frequency 4-A Sink Synchronous MOSFET Drivers
TPS28225-Q1_15 [Old version datasheet] TPS28225-Q1 High-Frequency 4-A Sink Synchronous MOSFET Drivers
TPS28225D [Old version datasheet] TPS28225 High-Frequency 4-A Sink Synchronous MOSFET Drivers
TPS28225DG4 [Old version datasheet] TPS28225 High-Frequency 4-A Sink Synchronous MOSFET Drivers
TPS28225DRBR [Old version datasheet] High-Frequency 4-A Sink Synchronous MOSFET Driver
TPS28225DRBT [Old version datasheet] High-Frequency 4-A Sink Synchronous MOSFET Driver
TPS28225DT [Old version datasheet] High-Frequency 4-A Sink Synchronous MOSFET Driver
TPS28225TDRBRQ1 [Old version datasheet] High-Frequency 4-A Sink Synchronous MOSFET Drivers
 

TPS28225DR Datasheet, PDF More

Texas Instruments TPS28225DRBT

The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-? impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

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德克萨斯仪器tps28225drbt
这是一个高速驱动的n沟免费驱动功率MOSFET与自适应死区时间控制。该驱动程序是用于各种大电流和多相DC-DC转换器的优化。这是一种提供高效率、小尺寸和低EMI发射的解决方案。
效率高达8.8-v栅极驱动电压达到14 ns的自适应死区时间控制,14 ns的传播延迟和高电流源和接收器驱动能力4 2。0.4对于低栅极驱动功率MOSFET?阻抗保持低于其阈值门,确保没有直通电流在高dv/dt阶段节点转换。由内部二极管充电的自举电容允许在半桥配置中使用n-沟道MOSFET。

 
 
 

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